DocumentCode :
1909925
Title :
RTS diagnostics of source-drain (edge?) related defects in submicron n-MOSFETs
Author :
Lukyanchikova, N. ; Petrichuk, M.V. ; Garbar, N. ; Simoen, E. ; Claeys, C.
Author_Institution :
Institute of Semiconductor Physics, Kiev, Ukraine
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
368
Lastpage :
371
Keywords :
CMOS technology; Condition monitoring; Fluctuations; Low-frequency noise; MOSFET circuits; Noise measurement; Physics; Semiconductor device noise; Semiconductor diodes; Telegraphy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194442
Filename :
1503372
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1909925
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