Title :
Effect of parameter optimization effort over mosfet models´ performances in analog circuits´ simulation
Author :
Balodi, Deepak ; Saha, Chumki ; Govidacharyulu, P.A.
Author_Institution :
Sch. of Phys., Univ. of Hyderabad, Hyderabad, India
Abstract :
The importances of MOSFET parameter extraction process along with the requirements for good optimization strategy to obtain better modeling results are discussed. Scope for achieving the flexibilities in parameter extraction process and strategy formation has also been discussed with the example of BSIM MOSFET model in 0.8 μm CMOS technology and it is argued that with the poor extraction strategy, even the more powerful BSIM3 (Level-49) model produces the comparable results to that of BSIM (Level-13) model. Finally the BSIM (Level-13 and Level-49) modeling efforts for various geometry devices are shown in comparative manner which are followed by qualitative analysis to conclude the important aspects of these models with optimization effects.
Keywords :
CMOS analogue integrated circuits; MOSFET; semiconductor device models; BSIM MOSFET model; BSIM level-13 model; BSIM level-49 model; BSIM3 model; CMOS technology; MOSFET model; MOSFET parameter extraction process; analog circuit simulation; geometry devices; optimization strategy; parameter extraction process; parameter optimization; strategy formation; Analog circuits; Analytical models; CMOS integrated circuits; CMOS technology; MOSFET circuits; Manganese; Semiconductor device modeling; BSIM; CAD; Model Binning; Parameters´ Extraction Strategy; SPICE; Subthreshold Region;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1545-7
DOI :
10.1109/ICDCSyst.2012.6188750
