Title :
Fabrication of 0.1 um MOSFET with Super Self-Aligned Ultrashallow Junction Electrodes Using Selective Si1-x Gex CVD
Author :
Murota, J. ; Ishii, M. ; Goto, K. ; Sakuraba, M. ; Matsuura, T. ; Kudoh, Y. ; Koyanagi, M.
Author_Institution :
Tohoku University
fDate :
22-24 September 1997
Keywords :
Annealing; Electrodes; Epitaxial growth; Fabrication; Impurities; MOSFET circuits; Machine intelligence; Plasma applications; Plasma sources; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194444
