Title :
Efficiency optimization of high power diode lasers at low temperatures
Author :
Frevert, C. ; Crump, P. ; Wenzel, Hans ; Knigge, S. ; Bugge, F. ; Erbert, Gotz
Author_Institution :
Leibniz-Inst. fur Hochstfrequenztechnik, Ferdinand-Braun-Inst., Berlin, Germany
Abstract :
The authors present studies which assess the benefit of low temperature operation of long cavity (L = 4 mm) broad-area lasers with the goal of achieving both high powers and high efficiencies. To this end, it was investigated the temperature dependence of 975 nm lasers with a single InGaAs quantum well embedded in a 2.4 μm thick waveguide with low aluminium content (Al0.13Ga0.87As).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; Al0.13Ga0.87As; InGaAs; InGaAs quantum well; efficiency optimization; high power diode lasers; long cavity; low aluminium content; size 2.4 mum; temperature dependence; wavelength 975 nm; Diode lasers; Optical pumping; Power generation; Semiconductor lasers; Temperature; Temperature dependence; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
DOI :
10.1109/CLEOE-IQEC.2013.6800756
