Title :
Nonlinear RF power amplifier behavioural analysis of wireless OFDM systems
Author :
O´Droma, Máirtín ; Lei, Yiming
Author_Institution :
Telecommun. Res. Centre, Univ. of Limerick, Limerick, Ireland
Abstract :
Four signal representation approaches are combined with a Bessel-Fourier PA envelope behavioural model of a GaN memoryless nonlinear power amplifier (PA) to reveal insights into the nonlinear amplification of multicarrier OFDM signals. Isolating and analyzing different orders of intermodulation product (IMP) impairment, the impact of higher order IMPs on ACPR degradation in the second and higher adjacent channel bands and how that is the determining factor for the PA´s upper limit operating point and power conversion efficiency, rather than the ACPR in the first adjacent band or the inband EVM degradation, may be shown.
Keywords :
III-V semiconductors; OFDM modulation; gallium compounds; power amplifiers; radio networks; radiofrequency amplifiers; signal representation; wide band gap semiconductors; ACPR degradation; Bessel-Fourier PA; IMP impairment; higher adjacent channel bands; inband EVM degradation; intermodulation product impairment; nonlinear RF power amplifier behavioural analysis; power conversion efficiency; signal representation approaches; wireless OFDM systems; Degradation; Dynamic range; Gallium nitride; Nonlinear distortion; OFDM; Power amplifiers; Signal representations;
Conference_Titel :
General Assembly and Scientific Symposium, 2011 XXXth URSI
Conference_Location :
Istanbul
Print_ISBN :
978-1-4244-5117-3
DOI :
10.1109/URSIGASS.2011.6050514
