Title :
Thermal stability and scalability of Zr-aluminate-based high-k gate stacks
Author :
Chen, P.J. ; Cartier, E. ; Carter, R.J. ; Kauerauf, T. ; Zhao, C. ; Petry, J. ; Cosnier, V. ; Xu, Z. ; Kerber, A. ; Tsai, W. ; Young, E. ; Kubicek, S. ; Caymax, M. ; Vandervorst, W. ; De Gendt, S. ; Heyns, M. ; Copel, M. ; Besling, W.F.A. ; Bajolet, P. ;
Author_Institution :
Texas Instrum. Inc., TX, USA
Abstract :
It is demonstrated that a narrow composition range exists in the ZrAl/sub x/O/sub y/ mixed oxide system between 25 and 50 mol% Al/sub 2/O/sub 3/, where the crystallization temperature exceeds 950/spl deg/C and at the same time the k-values remain larger than 12. In this composition range, enhanced thermal stability for better integration of the ZrAl/sub x/O/sub y/ gate dielectric in a conventional poly-Si device process is observed. It is also shown that thin interfacial oxides strongly enhance the electrical stability while allowing for thickness scaling down to /spl sim/1 nm, providing gate leakage current reductions of two to three orders of magnitude.
Keywords :
CVD coatings; MOS capacitors; capacitance; crystallisation; dielectric thin films; leakage currents; permittivity; thermal stability; zirconium compounds; 1 nm; 950 degC; C-V hysteresis; CMOS processing; MOS capacitors; ZrAl/sub x/O/sub y/; ZrAl/sub x/O/sub y/ mixed oxide system; ZrAl/sub x/O/sub y/-based high-k gate stacks; ZrO/sub 2/-Al/sub 2/O/sub 3/; atomic layer chemical vapor deposition; crystallization temperature; electrical stability; enhanced thermal stability; gate dielectric; gate leakage current reductions; k-values; narrow composition range; poly-Si device process; scalability; thermal stability; thickness scaling; thin interfacial oxides; Amorphous materials; Annealing; CMOS process; Crystallization; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; Scalability; Thermal stability;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015448
