• DocumentCode
    1910144
  • Title

    Accurate determination of bandgap narrowing in heavilydoped epitaxial p-type silicon

  • Author

    Ghannam, M.Y. ; Mertens, R.P.

  • Author_Institution
    Interuniversity Microelectronics Center IMEC, Kapeldreef 75, 3001 Leuven, Belgium, Tel: (016)-281288, Fax: (016)-281501.
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    691
  • Lastpage
    694
  • Abstract
    Bandgap narrowing in p-type epitaxial silicon uniformly doped with boron in the concentration range 2×1017 to 5×1018cm¿3 is evaluated from the temperature dependence of the collector current of npn bipolar transistors. The study is focussed on the sensitivity of the extracted bandgap narrowing to the model used to describe the intrinsic carrier concentration in pure silicon.
  • Keywords
    Bipolar transistors; Boron; Charge carrier processes; Doping; Electron mobility; Microelectronics; Photonic band gap; Silicon; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435386
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910144