DocumentCode
1910201
Title
A Schottky emitter using boron-doped diamond
Author
Joon Hyung Bae ; Minh, P.N. ; Ono, T. ; Esashi, M.
Author_Institution
Fac. of Eng., Tohoku Univ., Sendai, Japan
fYear
2003
fDate
7-11 July 2003
Firstpage
247
Lastpage
248
Abstract
In this paper, we demonstrate fabrication of a diamond Schottky emitter with integrated heating element by hot filament chemical vapor deposition on silicon substrate and characterisation by SEM. The diamond emitter provided an emission current of 800nA in the electric field.
Keywords
Schottky effect; boron; chemical vapour deposition; diamond; electron field emission; elemental semiconductors; semiconductor thin films; 800 nA; C:B; Schottky emitter; boron-doped diamond; electron field emission; hot filament chemical vapor deposition; integrated heating element; silicon substrate; Chemical elements; Electron beams; Electron emission; Electron guns; Glass; Heating; Scanning electron microscopy; Silicon; Stability; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location
Osaka, Japan
Print_ISBN
4-8181-9515-4
Type
conf
DOI
10.1109/IVMC.2003.1223076
Filename
1223076
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