Title :
A Schottky emitter using boron-doped diamond
Author :
Joon Hyung Bae ; Minh, P.N. ; Ono, T. ; Esashi, M.
Author_Institution :
Fac. of Eng., Tohoku Univ., Sendai, Japan
Abstract :
In this paper, we demonstrate fabrication of a diamond Schottky emitter with integrated heating element by hot filament chemical vapor deposition on silicon substrate and characterisation by SEM. The diamond emitter provided an emission current of 800nA in the electric field.
Keywords :
Schottky effect; boron; chemical vapour deposition; diamond; electron field emission; elemental semiconductors; semiconductor thin films; 800 nA; C:B; Schottky emitter; boron-doped diamond; electron field emission; hot filament chemical vapor deposition; integrated heating element; silicon substrate; Chemical elements; Electron beams; Electron emission; Electron guns; Glass; Heating; Scanning electron microscopy; Silicon; Stability; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223076
