DocumentCode :
1910210
Title :
Modeling Failure Reduction for Combinational Logic using Gate Level NMR
Author :
Ness, Drew C. ; Hescott, Christian J. ; Lilja, David J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN
fYear :
2007
fDate :
22-25 Jan. 2007
Firstpage :
208
Lastpage :
213
Abstract :
We present a mathematical model for describing the relationship between overhead and error reduction under single-error conditions in combinational logic using N-modular redundancy (NMR) as an upper bound. We then provide an analysis for the model under more realistic circuit and overhead assumptions. We compare system, sub-circuit, and gate level NMR. Based on our results, implementing NMR at the gate level offers the benefits of NMR with customizable overheads but with reduced effectiveness when compared to system level implementations
Keywords :
circuit reliability; combinational circuits; fault tolerance; N-modular redundancy; combinational logic; error reduction; failure reduction; single-error conditions; Circuits; Computer errors; Fault tolerance; Hardware; Logic design; Logic devices; Logic gates; Mathematical model; Nuclear magnetic resonance; Redundancy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability and Maintainability Symposium, 2007. RAMS '07. Annual
Conference_Location :
Orlando, FL
ISSN :
0149-144X
Print_ISBN :
0-7803-9766-5
Electronic_ISBN :
0149-144X
Type :
conf
DOI :
10.1109/RAMS.2007.328120
Filename :
4126351
Link To Document :
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