• DocumentCode
    1910233
  • Title

    A performance comparison between 0.35um self-aligned and quasi-self-aligned double-polysilicon bipolar transistors

  • Author

    Ailloud, L. ; de Pontcharra, J. ; Bartoletti, G. ; Kirtsch, J. ; Auvert, G. ; Chantre, A.

  • Author_Institution
    SGS/Thomson Microelectronics, France and CEA-LETI, France
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    412
  • Lastpage
    415
  • Keywords
    BiCMOS integrated circuits; Bipolar transistors; Boron; Dielectrics; Etching; Fabrication; Implants; Microelectronics; Silicon carbide; Telecommunications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194453
  • Filename
    1503383
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910233