Porous n/sup +/-type sucon - polyaniline eleciroluminescent diode

Summary form only given, as follows. Aniline is polymenzed inside the empty pores of porous n⁺-type Si (PS) films, on the inner surface of the PS, by repeated chemical bath deposition, from its dilute solution in a mixture of HCl - ethanol - water, using (NH₄)2S₂Q as oxidant. The autocatalytic heterogeneous polymerization of aniline allows the filling of the empty pores by the polymer. A convenient mean filling rate per step is 130 nm. The PANI-filled and covered PS hetemjunction behaves as a semiconductor diode. Electroluminescence (EL) is observed under a forward bias of several volts applying the positive polarity on a Au contact deposited on top of the PANI layer. The EL intensity is directly proportional to the forward current. The EL peak is like the PL peak of PS, indicating a common origin. The emeraldine pperties: (1) large band gap p⁺-type semiconductor, (2) weak absorbance for the green, yellow and orange light, and (3) stability of the conducting form in air, are well suited for making PS EL diodes. The detailed deposifich technology, electrical and spectmphotomtrical characterization of the diode will be presented.