Title :
An investigation of polysilicon emitter bipolar transistors with an ozonized polysilicon/monosilicon interface
Author :
Niel, S. ; Hernandez, C. ; Pantel, R. ; Sagnes, I. ; Berenguer, M. ; Kirtsch, J. ; Monroy, A. ; Chantre, A. ; Vincent, G.
Author_Institution :
France Telecom, CNET, France
fDate :
22-24 September 1997
Keywords :
BiCMOS integrated circuits; Bipolar transistors; Cleaning; Energy loss; Hafnium; MONOS devices; Microelectronics; Rapid thermal processing; Telecommunications; Thickness measurement;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194454
