A Manufacturable 0.35 um BiCMOS using Self-Aligned Cobalt SilicideTechnology

Author

Igarashi, T. ; Kubo, S. ; Suda, K. ; Nakashima, T. ; Ohtsu, Y. ; Yamawaki, M. ; Asai, S.

Author_Institution

Mitsubishi Electric Corporation, Japan

fYear

1997

fDate

22-24 September 1997

Firstpage

420

Lastpage

423

Keywords

BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Cobalt; Electrodes; Etching; Fabrication; Manufacturing; Protection;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

Print_ISBN

2-86332-221-4

Type

DOI

10.1109/ESSDERC.1997.194455

Filename

1503385

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