Field electron emission from amorphous AlN and Cr doped AlN Films

Author

Liao, M.Y. ; Gotoh, Y. ; Tsuji, H. ; Ishikawa, J.

Author_Institution

Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan

fYear

2003

fDate

7-11 July 2003

Firstpage

251

Lastpage

252

Abstract

In this paper, we presented field emission properties from amorphous AlN based films, which were reactively sputter-deposited on heavily boron-doped P-Si(100) wafers at room temperature in an atmosphere of argon and nitrogen. Both undoped and Cr-doped AlN films were prepared. The characteristics of the films are studied. The doping level of Cr was controlled through changing the number of Cr sheets arranged on the Al target. The Cr concentration in the doped film was determined by Rutherford backscattering spectroscopy, and some oxygen was detected in the films due to the unclean system. X-ray diffraction measurement shows that all the films are in nearly amorphous state.

Keywords

Rutherford backscattering; aluminium compounds; amorphous semiconductors; chromium; electron field emission; semiconductor thin films; sputtered coatings; wide band gap semiconductors; 293 to 298 K; Al target; AlN; AlN:Cr; Cr concentration; Cr doped AlN Films; Cr doping level; Rutherford backscattering spectroscopy; Si:B; X-ray diffraction; amorphous AlN; amorphous state; field electron emission; field emission properties; film properties; heavily boron-doped P-Si(100) wafers; room temperature; Amorphous materials; Argon; Atmosphere; Backscatter; Chromium; Doping; Electron emission; Nitrogen; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International

Conference_Location

Osaka, Japan

Print_ISBN

4-8181-9515-4

Type

conf

DOI

10.1109/IVMC.2003.1223078

Filename

1223078