Title :
CMOS Production Compatible SiGe Heteroepitaxy for High Frequency Circuits
Author :
Ritter, G. ; Bolze, D. ; Fischer, G. ; Knoll, D. ; Schley, P. ; Tillack, B. ; Wolansky, D.
Author_Institution :
Institute for Semiconductor Physics, Germany
fDate :
22-24 September 1997
Keywords :
CMOS technology; Circuits; Electrical resistance measurement; Epitaxial growth; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Production; Semiconductor device measurement; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194456
