Title :
A Silicon Technology for Active High Frequency Circuits
Author :
Strohm, K.M. ; Buechler, J. ; Luy, J.F. ; Schäffler, F.
Author_Institution :
Daimler Benz Research Center, Wilhelm-Runge Str. 11, D-7900 Ulm, Germany
Abstract :
Monolithic integrated IMPATT diodes are manufactured as millimeter wave power generators in slot line resonator-antennas. Silicon molecular beam epitaxy (Si-MBE) is used for the growth of the active layers. A fabrication process with a self stopping etchant, self aligned contacts, silicon nitride passivation and air-bridge technology is used. The emitted radiation of the millimeter wave transmitter chip is 2.6 mW at 90.6 GHz in cw-operation and 50 mW at 92 GHz in pulsed operation.
Keywords :
Diodes; Fabrication; Frequency; Integrated circuit technology; MIMICs; Manufacturing; Millimeter wave technology; Molecular beam epitaxial growth; Power generation; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
