An Accurate In-Fixture Measurement Method for AlN Film Bulk Acoustic Resonators

Author

Hang Xu ; Yanjie Su ; Hanlin Yang ; Dong Xu ; Yafei Zhang ; Da Chen ; Yijian Liu

Author_Institution

Inst. of Micro/Nano Sci. & Technol., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2012

fDate

14-16 Dec. 2012

Firstpage

183

Lastpage

186

Abstract

In this paper, a solid mounted FBAR working at 2.0 GHz was fabricated, which was intended for high sensitive molecular sensing. To measure the devices conveniently and accurately on the board, an in-fixture measurement method based on the de-embedded technique using the fixture model and the measured S-parameters is developed with high precision to get rid of the cumbrous probe station. The fixture was modeled accurately and the results were compared with that from the probe station. Optimized approaches have been developed with small deviations, enabling some gas or biochemical tests in real time.

Keywords

III-V semiconductors; S-parameters; acoustic resonators; aluminium compounds; bulk acoustic wave devices; semiconductor device measurement; wide band gap semiconductors; AlN; S-parameters; biochemical tests; deembedded technique; film bulk acoustic resonators; frequency 2.0 GHz; gas tests; high sensitive molecular sensing; in-fixture measurement method; probe station; FBAR; accurate measurement; de-embedding; in-fixture; real-time;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Science and Engineering (ISISE), 2012 International Symposium on

Conference_Location

Shanghai

ISSN

2160-1283

Print_ISBN

978-1-4673-5680-0

Type

conf

DOI

10.1109/ISISE.2012.46

Filename

6495322