Title :
A Systematic Investigation of N-Channel Delta-Doped Mosfets Grown by M.B.E.
Author :
O´Neill, A.G. ; Wood, A.C.G. ; Phillips, P. ; Whall, T.E. ; Parker, E.H.C. ; Gundlach, A. ; Taylor, S.
Author_Institution :
Department of Electrical and Electronic Engineering, University of Newcastle-upon-Tyne, Merz Court, Newcastle-upon-Tyne, NEl 7RU, U.K.
Abstract :
The fabrication of a set of delta-doped MOSFETs with a range of gate areas down to 0.8¿mx0.8¿m is reported. Current-voltage curves have been measured and compared with results predicted by the HFIELDS device model. A transition in the I-V characteristic is identified and attributed to the formation of a parasitic channel immediately below the gate oxide. Good control of the threshold voltage is achieved in devices across the wafer.
Keywords :
Current measurement; Doping; FETs; Fabrication; Hot carriers; Impurities; MOSFETs; Scattering; Threshold voltage; Voltage control;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
