Title :
Multi-level vertical channel SONOS nonvolatile memory on SOI
Author :
Yong Kyu Lee ; Suk Kang Sung ; Jae Seong Sim ; Chang Ju Lee ; Tae Hun Kim ; Sang Hun Lee ; Jong Duk Lee ; Byung Gook Park ; Dong Hun Lee ; Young Wuk Kim
Author_Institution :
Inter-university Semicond. Res. Center, Seoul Nat. Univ., South Korea
Abstract :
A new VC-SONOS (vertical channel SONOS) memory cell structure is proposed and fabricated using a 0.12 /spl mu/m SOI standard logic process for a next generation flash memory cell with ultra high density. This fabricated VC-SONOS memory cell, which has 57 nm wide vertical channels and 15 /spl Aring/ tunnel gate oxide, shows not only scaling breakthrough beyond 0.10 /spl mu/m flash memory but also multi-level operation with negative programming voltages.
Keywords :
PLD programming; dielectric thin films; elemental semiconductors; flash memories; integrated memory circuits; microprogramming; random-access storage; silicon; silicon compounds; tunnelling; 0.1 micron; 0.12 micron; 15 angstrom; 57 nm; SOI; SOI standard logic process; Si-SiO/sub 2/; Si-SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/-Si; VC-SONOS memory cell structure; multi-level operation; multi-level vertical channel SONOS nonvolatile memory; negative programming voltages; scaling breakthrough; tunnel gate oxide; ultra high density flash memory cell; vertical channel SONOS; vertical channels; Charge carrier processes; Electronic mail; Electronics industry; Flash memory; Large scale integration; Nonvolatile memory; SONOS devices; Silicon; Tunneling; Voltage;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015455
