A two dimensional analytical modeling of fully depleted dual material gate SON MOSFET and evidence for suppressed SCEs

In this paper, an analytical model of a fully depleted nanoscale dual- material gate (DMG) SON MOSFET has been developed and performance comparison is made with SMG SON MOSFET. A 2D Poisson´s solution based generalized threshold voltage model has been developed. It is found that the introduction of the DMG structure in a fully depleted SON MOSFET leads to subdued SCEs due to a step-function in the channel potential profile thereby improving device performance and enhances devices scalability some steps further with the extreme exploitation of the idea, threshold control by means of multiple material gate electrode.