Title :
Photon Emission from Sub-Micron p-Channel Mosfets Biased at High Fields
Author :
Selmi, Luca ; Lanzoni, Massimo ; Bigliardi, Stefano ; Sangiorgi, Enrico
Author_Institution :
Dept.of Electronics, V.le Risorgimento 2, 40136 Bologna, Italy
Abstract :
In this paper we report the first experimental data on hot carrier luminescence in silicon p-channel MOS transistors featuring sub-micron gate length. All the terminal currents of the devices (including the gate and substrate currents) were also measured, and their dependence on the applied bias is analyzed and compared to that of the emitted light intensity.
Keywords :
Charge carrier processes; Current measurement; Electron emission; Energy measurement; Hot carriers; MOS devices; MOSFETs; Microelectronics; Physics; Vehicles;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
