Quantum mechanical theory and modeling of molecular transistors

Author

Pati, Ranjit ; Karna, Shashi P.

Author_Institution

Albuquerque High Performance Comput. Center, New Mexico Univ., Albuquerque, NM, USA

fYear

2001

fDate

2001

Firstpage

341

Lastpage

345

Abstract

A theoretical formalism based on the Buttiker multiterminal response formula has been developed and applied to model a novel three terminal molecular device, constructed from common organic donor, acceptor and π-electron conjugated spacer structures. Quantum conductivity calculations in the tight binding (extended Huckel) framework show switching behavior in the calculated I-V characteristics of the modeled transistor upon application of an external potential to the third capacitive gate terminal

Keywords

EHT calculations; molecular electronics; quantum theory; tight-binding calculations; Bottiker multiterminal response formula; I-V characteristics; acceptor structures; capacitive gate terminal; common organic donor; extended Huckel framework; model; molecular transistors; n-electron conjugated spacer; quantum conductivity calculations; quantum mechanical theory; switching behavior; three terminal molecular device; tight binding framework; Chemicals; Conductivity; Electrodes; Electrons; Energy states; Extraterrestrial measurements; Gold; Military computing; Molecular electronics; Quantum mechanics;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on

Conference_Location

Maui, HI

Print_ISBN

0-7803-7215-8

Type

conf

DOI

10.1109/NANO.2001.966445

Filename

966445