Title :
Quantum mechanical theory and modeling of molecular transistors
Author :
Pati, Ranjit ; Karna, Shashi P.
Author_Institution :
Albuquerque High Performance Comput. Center, New Mexico Univ., Albuquerque, NM, USA
Abstract :
A theoretical formalism based on the Buttiker multiterminal response formula has been developed and applied to model a novel three terminal molecular device, constructed from common organic donor, acceptor and π-electron conjugated spacer structures. Quantum conductivity calculations in the tight binding (extended Huckel) framework show switching behavior in the calculated I-V characteristics of the modeled transistor upon application of an external potential to the third capacitive gate terminal
Keywords :
EHT calculations; molecular electronics; quantum theory; tight-binding calculations; Bottiker multiterminal response formula; I-V characteristics; acceptor structures; capacitive gate terminal; common organic donor; extended Huckel framework; model; molecular transistors; n-electron conjugated spacer; quantum conductivity calculations; quantum mechanical theory; switching behavior; three terminal molecular device; tight binding framework; Chemicals; Conductivity; Electrodes; Electrons; Energy states; Extraterrestrial measurements; Gold; Military computing; Molecular electronics; Quantum mechanics;
Conference_Titel :
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-7215-8
DOI :
10.1109/NANO.2001.966445
