A fully monolithic integrated 60 GHz receiver

Author

Colquhoun, A. ; Ebert, G. ; Selders, J. ; Adelseck, B. ; Dieudonne, J.M. ; Schmegner, K.E. ; Schwab, W.

Author_Institution

Telefunken Electron., Heilbronn, West Germany

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

185

Lastpage

188

Abstract

A fully monolithic, 60-GHz GaAs receiver consisting of a single balanced microstrip mixer and a two-stage IF amplifier has been designed and fabricated. The complete receiver exhibited a conversion gain of 12.4 dB and an overall DSB noise figure of 9 dB for an IF frequency of 4 GHz. Similar results were obtained at a frequency of 51 GHz. The cutoff frequencies of the Schottky diodes were up to 2300 GHz, and mixer stages realized using these diodes showed a conversion loss of 6 dB and a noise figure (DSB) of 3.3 dB. Multifinger recessed gate MESFETs were used to realize a two stage IF amplifier at 4 GHz. The amplifier exhibited a gain of 20.6 dB and a minimum noise figure of 1.7 db.<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; intermediate-frequency amplifiers; microwave amplifiers; mixers (circuits); radio receivers; 1.7 to 9 dB; 12.4 dB; 2.3 THz; 20.6 dB; 4 GHz; 51 GHz; 6 dB; 60 GHz; DSB noise figure; EHF; GaAs; IF frequency; MMIC; Schottky diodes; conversion gain; conversion loss; cutoff frequencies; mixer stages; monolithic integrated 60 GHz receiver; multifinger recessed gate MESFETs; noise figure; semiconductors; single balanced microstrip mixer; two-stage IF amplifier; Capacitance measurement; Circuits; Electrical resistance measurement; Fingers; Gallium arsenide; MESFETs; Mixers; Noise figure; RAKE receivers; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69322

Filename

69322