Title :
High-performance MRAM technology with an improved magnetic tunnel junction material
Author :
Motoyoshi, Mizuki ; Moriyama, K. ; Mori, H. ; Fukumoto, C. ; Itoh, H. ; Kano, H. ; Bessho, K. ; Narisawe, H.
Author_Institution :
Sony Corp., Yokohama, Japan
Abstract :
This work is a report on high-performance MRAM technology. 0.4/spl times/0.8 /spl mu/m/sup 2/ MTJ elements were successfully integrated with 0.35 /spl mu/m CMOS technology without process-induced damage. A magnetoresistance (MR) ratio of more than 55% and the read/write operating point were obtained by introducing an improved magnetic tunnel junction (MTJ) material. The short-pulse writing in combination with an improved cell structure suggests that MRAM has a great deal of potential for low power applications.
Keywords :
CMOS memory circuits; integrated circuit technology; magnetic film stores; magnetoresistive devices; random-access storage; 0.35 micron; 0.4 micron; 0.8 micron; CMOS technology integration; MRAM technology; MTJ elements; cell structures; low power applications; magnetic tunnel junction material; magnetoresistance ratio; process-induced damage; read/write operating point; short-pulse writing; CMOS technology; Energy consumption; Force measurement; Magnetic anisotropy; Magnetic field measurement; Magnetic materials; Magnetic tunneling; Perpendicular magnetic anisotropy; Shape; Writing;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015457
