Title :
Effect of hydrogen plasma treatment on uniformity of field emission from carbon nanotube film
Author :
Liang, X.H. ; Jun Chen ; Deng, S.Z. ; Xu, N.S.
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Zhongshan Univ., Guangzhou, China
Abstract :
Summary form only given. The effect of surface treatment by hydrogen plasma treatment on the uniformity field emission from carbon nanotube (CNT) film will be studied. The CNT film was prepared by using thermal vapour deposition (CVD) on Ni-Cr/Si. The surface of as-grown CNT film will be treated by reactive ion etch (RIE) system in hydrogen plasma. In order to compare the microstructure of untreated CNT film with treated CNT film, scanning electron microscopy and transmission electron microscopy will be employed. The I-V characteristics and uniformity of field emission of both the untreated and treated CNT film will be measured in ultra-high vacuum by using transparent anode technique. The I-V and uniformity of field emission of the CNT film will be compared before and after hydrogen plasma treatment. The mechanism for the observed effect will be investigated.
Keywords :
carbon nanotubes; chemical vapour deposition; field emission; scanning electron microscopy; sputter etching; thin films; transmission electron microscopy; C; CVD; Ni-Cr-Si; SEM; TEM; carbon nanotube film; field emission; hydrogen plasma treatment; reactive ion etching; scanning electron microscopy; thermal vapour deposition; transmission electron microscopy; Carbon nanotubes; Chemical vapor deposition; Plasma applications; Plasma measurements; Plasma properties; Scanning electron microscopy; Semiconductor films; Surface treatment; Transmission electron microscopy;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223084
