Title :
Effect of electron heating on RTS in deep submicron n-MOSFET´s
Author :
Shi, Z.M. ; Miéville, J.P. ; Dutoit, M.
Author_Institution :
Institute for Micro-and Optoelectronics, Physics Departement, Swiss Federal Institute of Technology (EPFL), CH-1015 Lausanne, Switzerland
Abstract :
The influence of electron heating due to the lateral electric field on RTS in deep submicrometer MOSFET´s is analyzed. The mean capture time by acceptor traps is shown to decrease rapidly with increasing field. A simple theoretical model gives a good description of the observed results. It provides an estimate of the trap location along the channel.
Keywords :
Electron beams; Electron traps; Energy capture; Heating; Lattices; MOSFET circuits; Microelectronics; Tellurium; Temperature dependence; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
