Title :
New guideline for hydrogen treatment in advanced system LSI
Author :
Morifuji, E. ; Kumamori, T. ; Muta, M. ; Suzuki, K. ; Krishnan, M.S. ; Brozek, T. ; Li, X. ; Asano, W. ; Nishigori, M. ; Yanagiya, N. ; Yamada, S. ; Miyamoto, K. ; Noguchi, T. ; Kakumu, M.
Author_Institution :
Syst. LSI Div., Toshiba Corp., Yokohama, Japan
Abstract :
In this paper, we focus on hydrogen related processes and its impact on system LSI. Hydrogen affects not only DRAM performance but also reliability characteristics for MOSFET such as NBTI (negative bias temperature instability), HCI (hot carrier injection), and TDDB. We demonstrate that NBTI and HCI are degraded by excess hydrogen while improving retention characteristics of eDRAM. It is shown for the first time that anomalous degradation in TDDB for downsized MOSFET is caused by the compressive stress by STI and shows strong correlation to hydrogen processes. The optimization of hydrogen processes is indispensable for highly reliable system LSI in future generations.
Keywords :
DRAM chips; MOS memory circuits; annealing; hot carriers; integrated circuit reliability; isolation technology; large scale integration; passivation; semiconductor device breakdown; DRAM performance; MOSFET; NBTI; STI; TDDB; advanced system LSI; eDRAM; hot carrier injection; negative bias temperature instability; reliability characteristics; retention characteristics; Degradation; Guidelines; Human computer interaction; Hydrogen; Large scale integration; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Random access memory; Titanium compounds;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015459
