Title :
The effects of substrate coupling on triggering uniformity and ESD failure threshold of fully silicided NMOS transistors
Author :
Huh, Y.J. ; Axerad, V. ; Chen, J.-W. ; Bendix, P.
Author_Institution :
Device Technol. Gr, LSI Logic Corp., Milpitas, CA, USA
Abstract :
We present a multi-finger turn-on model incorporating substrate coupling effects in multi-finger NMOS transistors during ESD events. It is demonstrated that the substrate coupling enables uniform triggering in a multi-finger structure. In addition, we show that fully silicided transistors can be used successfully as an ESD protection device without any design/process options if the effective epi thickness is larger than 1.5 /spl mu/m or bulk wafer is used.
Keywords :
MOSFET; electrostatic discharge; failure analysis; semiconductor device models; semiconductor device reliability; 1.5 micron; ESD failure threshold; bulk wafer; design/process options; epi thickness; fully silicided NMOS transistors; multi-finger turn-on model; protection device; substrate coupling; triggering uniformity; uniform triggering; Breakdown voltage; Delay effects; Doping; Electrostatic discharge; Fingers; Large scale integration; Logic devices; MOS devices; MOSFETs; Protection;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015461
