DocumentCode :
1910551
Title :
Random Dopant induced variability in SOI trigate FINFET: A simulation study
Author :
Reddy, G. Rama Pradeep ; Bindu, B.
Author_Institution :
Dept. of Electron. & Commun. Eng., Anna Univ., Chennai, India
fYear :
2012
fDate :
15-16 March 2012
Firstpage :
581
Lastpage :
584
Abstract :
This paper presents a comprehensive 3-D simulation variability study of parameters like threshold voltage (Vth), transconductance (gm), ON resistance (Ron), subthreshold slope (SS), ON current (Ion) and OFF current (Ioff) due to Random Discrete Dopants (RDD) allocated in the channel due to very small channel volume. Both the 2D and 3D simulations of variability are carried out for analysis. The variability in the inverter characteristics are also presented.
Keywords :
MOSFET; elemental semiconductors; silicon; silicon-on-insulator; 2D simulations; SOI trigate FINFET; Si; channel volume; comprehensive 3D simulation variability study; inverter characteristics; off current; on current; on resistance; random-discrete dopants; random-dopant-induced variability; subthreshold slope; threshold voltage; transconductance; Boron; Logic gates; Silicon; Double Gate (DG); FinFET; RDD; Tri-Gate (TG); threshold voltage; variability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1545-7
Type :
conf
DOI :
10.1109/ICDCSyst.2012.6188775
Filename :
6188775
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1910551
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