• DocumentCode
    1910551
  • Title

    Random Dopant induced variability in SOI trigate FINFET: A simulation study

  • Author

    Reddy, G. Rama Pradeep ; Bindu, B.

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Anna Univ., Chennai, India
  • fYear
    2012
  • fDate
    15-16 March 2012
  • Firstpage
    581
  • Lastpage
    584
  • Abstract
    This paper presents a comprehensive 3-D simulation variability study of parameters like threshold voltage (Vth), transconductance (gm), ON resistance (Ron), subthreshold slope (SS), ON current (Ion) and OFF current (Ioff) due to Random Discrete Dopants (RDD) allocated in the channel due to very small channel volume. Both the 2D and 3D simulations of variability are carried out for analysis. The variability in the inverter characteristics are also presented.
  • Keywords
    MOSFET; elemental semiconductors; silicon; silicon-on-insulator; 2D simulations; SOI trigate FINFET; Si; channel volume; comprehensive 3D simulation variability study; inverter characteristics; off current; on current; on resistance; random-discrete dopants; random-dopant-induced variability; subthreshold slope; threshold voltage; transconductance; Boron; Logic gates; Silicon; Double Gate (DG); FinFET; RDD; Tri-Gate (TG); threshold voltage; variability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems (ICDCS), 2012 International Conference on
  • Conference_Location
    Coimbatore
  • Print_ISBN
    978-1-4577-1545-7
  • Type

    conf

  • DOI
    10.1109/ICDCSyst.2012.6188775
  • Filename
    6188775
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910551