DocumentCode :
1910553
Title :
More than 400 times electron emission enhancement at low vacuum and very low accelerating voltage by selecting suitable cathode material
Author :
Mourad, M.H. ; Kumagai, S. ; Samukawa, S.
Author_Institution :
Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan
fYear :
2003
fDate :
7-11 July 2003
Firstpage :
273
Lastpage :
274
Abstract :
In this paper, we verify that by selecting a suitable cathode material for electron emitter devices, the electron emission is enhanced by more than 400 times.
Keywords :
cathodes; electron field emission; gold; indium; silicon compounds; In-SiO/sub x/-Au; cathode devices; cathode material; electron emission enhancement; Acceleration; Cathodes; Dielectric materials; Electron emission; Gold; Indium; Low voltage; Silicon; Time measurement; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
Type :
conf
DOI :
10.1109/IVMC.2003.1223089
Filename :
1223089
Link To Document :
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