Accurate Modeling of Electro-Thermal Effects in Silicon Devices

Due to the ever-increasing integration scale, power dissipation and device heating is now becoming of significant concern even for VLSI device designers. Therefore, suitable simulation tools must be generated which handle the non-isothermal regime in three dimensions. This paper summarizes the derivation of a new heat-transport model which self-consistently accounts for heating effects. Results of some 3D, electro-thermal device simulations are finally shown.