DocumentCode
1910555
Title
Accurate Modeling of Electro-Thermal Effects in Silicon Devices
Author
Pierantoni, A. ; Ciampolini, P. ; Baccarani, G.
Author_Institution
Dipartimento di Elettronica, Informatica e Sistemistica, UniversitÃ\xa0 di Bologna, viale Risorgimento 2, 40136 Bologna, Italy
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
769
Lastpage
772
Abstract
Due to the ever-increasing integration scale, power dissipation and device heating is now becoming of significant concern even for VLSI device designers. Therefore, suitable simulation tools must be generated which handle the non-isothermal regime in three dimensions. This paper summarizes the derivation of a new heat-transport model which self-consistently accounts for heating effects. Results of some 3D, electro-thermal device simulations are finally shown.
Keywords
Charge carrier processes; Equations; Heating; Lattices; Microelectronics; Power dissipation; Power engineering and energy; Semiconductor devices; Silicon devices; Thermodynamics;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435404
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