Title :
Cost effective simulation of three-dimensional effects in the shallow trench isolation process
Author :
Sallagoïty, P. ; Ada-Hanifi, M. ; Poncet, A.
fDate :
22-24 September 1997
Keywords :
Analytical models; CMOS process; CMOS technology; Costs; Filling; Isolation technology; MOSFETs; Performance analysis; Telecommunications; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194467
