Analysis of Transient Behaviour of Floating Gate EEPROMs

Charge transport and storage are essentially the mechanisms that describe the operation of non-volatile memory. In this paper, the importance of transient analysis in the design of floating gate EEPROMs is demonstated. Anomalous behaviour, which was identified during transient measurements, has been simulated using HFIELDS, a general purpose device simulator. The corrective action that was taken at the time has been analysed and explained using the simulation results. In addition the simulator has been used to investigate two dimensional effects in the device due to process non-idealities.