Title :
Accurate Analysis of Emitter Ballasting in HBT Power Transistors
Author :
Mintsa, R. Mezui ; Hassaine, N. ; Riet, M. ; Villeforceix, B. ; Konczykowska, A. ; Vuye, S. ; Wang, H.
Author_Institution :
FRANCE-TELECOM, Centre National d´´Etudes des Télécommunications, Laboratoire de Bagneux, 196 avenue Henri Ravera, 92220 Bagneux (FRANCE)
Abstract :
An accurate analysis of emitter ballasting, taking into account the current gain dependence on the temperature and the collector current is presented in this paper. Numerical computations of current-voltage characteristics have been performed using the emitter ballasting resistance as a parameter. Power HBTs for mobile communications have been fabricated. Load-pull measurements at the L band have shown 30 dBm maximum output power and 45% power added efficiency with 8.5dB associated gain.
Keywords :
Current-voltage characteristics; Electrical resistance measurement; Electronic ballasts; Gain measurement; Heterojunction bipolar transistors; Mobile communication; Power generation; Power measurement; Power transistors; Temperature dependence;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
