Title :
Influence of short channel effects on microwave performances of AlGaAs/InGaAs HEMTs using Monte Carlo simulation
Author :
Dollfus, P. ; Bru, C. ; Galdin, S. ; Hesto, P.
Author_Institution :
Institut d´´Electronique Fondamentale - CNRS URA22, Université Paris-Sud - Bât. 220 - 91405 Orsay cedex - France
Abstract :
The influence of reduction of gate length down to 50nm on microwave performances of HEMTs is studied using small-signal Monte Carlo simulations. Cutoff frequencies are determined and equivalent circuit models are deduced from Z parameters calculation. With a 100nm gate length a higher gm and a slightly lower fT are obtained than with a 50nm gate length.
Keywords :
Cutoff frequency; Equivalent circuits; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Monte Carlo methods; Steady-state; Transient analysis; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
