• DocumentCode
    1910635
  • Title

    Correlation between Mobility Degradation and Threshold-Voltage Behavior of Subhalf-micron MOSFETs

  • Author

    Wildau, H.-J. ; Bernt, H. ; Friedrich, D. ; Seifert, W. ; Staudt-Fischbach, P. ; Wagemann, H.G. ; Windbracke, W.

  • Author_Institution
    Institut fÿr Werkstoffe der Elektrotechnik der Technischen Universitÿt Berlin, JebensstraÃ\x9fe 1, Sekr. J10, D-1000 Berlin 12
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    785
  • Lastpage
    788
  • Abstract
    Minority carrier mobility has been extracted from measurements on NMOS transistors with effective channel lengths down to 0.35 ¿m within the temperature range 208-403 K. The results indicate a significant mobility reduction for short channel devices at temperatures below 300 K. Furthermore, a slight increase of the threshold voltage was observed in the short channel region. Both effects can be explained by an inhomogeneous lateral doping profile within the channel, which was confirmed with 2-dimensional device simulation.
  • Keywords
    Degradation; Electric variables measurement; Geometry; Length measurement; MOSFETs; Scanning electron microscopy; Semiconductor process modeling; Temperature distribution; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435408
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910635