Title :
Correlation between Mobility Degradation and Threshold-Voltage Behavior of Subhalf-micron MOSFETs
Author :
Wildau, H.-J. ; Bernt, H. ; Friedrich, D. ; Seifert, W. ; Staudt-Fischbach, P. ; Wagemann, H.G. ; Windbracke, W.
Author_Institution :
Institut fÿr Werkstoffe der Elektrotechnik der Technischen Universitÿt Berlin, JebensstraÃ\x9fe 1, Sekr. J10, D-1000 Berlin 12
Abstract :
Minority carrier mobility has been extracted from measurements on NMOS transistors with effective channel lengths down to 0.35 ¿m within the temperature range 208-403 K. The results indicate a significant mobility reduction for short channel devices at temperatures below 300 K. Furthermore, a slight increase of the threshold voltage was observed in the short channel region. Both effects can be explained by an inhomogeneous lateral doping profile within the channel, which was confirmed with 2-dimensional device simulation.
Keywords :
Degradation; Electric variables measurement; Geometry; Length measurement; MOSFETs; Scanning electron microscopy; Semiconductor process modeling; Temperature distribution; Threshold voltage; Very large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
