DocumentCode :
1910646
Title :
The uniformity properties of diode structure field emission display matrix
Author :
Ren, H. ; Deng, S.Z. ; Jun Chen ; Xu NS
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Zhongshan Univ., Guangzhou, China
fYear :
2003
fDate :
7-11 July 2003
Firstpage :
279
Abstract :
Summary form only given. In this paper, we researched the uniformity properties of diode filed emission display matrix. The diode field emission display structure was prepared by screen-printing and vacuum coating technology. Matrix points are formed at the intersection of cathode and anode stripes. Emission currents and images were tested in the d.c. mode and pulse mode. For improving the emission uniformity and stability, we modified the cathode structure based on electric field analysis. Due to the electrical fields are strongly enhanced at the edges of the electrode, narrower carbon nanotube emitter stripes were printed only on one edges of the cathode electrodes, and insulated barrier walls with same height were close printed at the same edge of the emitter stripes. This structure could improve the vertical emission and limit the sidelong emission because of edge field effect. We also introduced plasma etching treatment to modify the surface morphology and improve the field emission properties. A diode field emission display devices with 30×30 matrix showed a stable image. The emission uniformity and stability was improved.
Keywords :
carbon nanotubes; cathodes; electrochemical electrodes; field emission; field emission displays; nanotube devices; printing; sputter etching; surface morphology; C; anode stripes; carbon nanotube emitter stripes; diode structure field emission display matrix; edge field effect; electric field analysis; electrode; emission currents; plasma etching; screen printing; surface morphology; vacuum coating technology; Cathodes; Electrodes; Flat panel displays; Plasma displays; Plasma properties; Vacuum technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
Type :
conf
DOI :
10.1109/IVMC.2003.1223092
Filename :
1223092
Link To Document :
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