DocumentCode
1910665
Title
Trends in Silicon-on-insulator Technology
Author
Colinge, Jean-Pierre
Author_Institution
Université Catholique de Louvain, Maxwell-FAI, Place du Levant 3, B-1348 Louvain-la-Neuve
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
795
Lastpage
802
Abstract
SOI technology has quickly evolved from the first laser recrystallization experiments of the early eighties to the recent fabrication of 256k SRAMs in thin-film material. Of the many different SOI materials which have been investigated, some have found successful applications, while others never really quite made it. For example, laser recrystallization has been used to produce incredible 3D integrated circuits in Japan, but the fabrication yield is close to zero. SIMOX (separation by implantation of oxygen), and BESOI (bonded and etched-back SOI), on the other hand, are quite successful, and are now used for the fabrication of integrated devices with good fabrication yield. This paper will quickly review the ``history´´ of several major SOI materials and their field of application.
Keywords
Annealing; Etching; Grain boundaries; History; Integrated circuit yield; Optical device fabrication; Optical materials; Semiconductor films; Silicon on insulator technology; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435410
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