• DocumentCode
    1910665
  • Title

    Trends in Silicon-on-insulator Technology

  • Author

    Colinge, Jean-Pierre

  • Author_Institution
    Université Catholique de Louvain, Maxwell-FAI, Place du Levant 3, B-1348 Louvain-la-Neuve
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    795
  • Lastpage
    802
  • Abstract
    SOI technology has quickly evolved from the first laser recrystallization experiments of the early eighties to the recent fabrication of 256k SRAMs in thin-film material. Of the many different SOI materials which have been investigated, some have found successful applications, while others never really quite made it. For example, laser recrystallization has been used to produce incredible 3D integrated circuits in Japan, but the fabrication yield is close to zero. SIMOX (separation by implantation of oxygen), and BESOI (bonded and etched-back SOI), on the other hand, are quite successful, and are now used for the fabrication of integrated devices with good fabrication yield. This paper will quickly review the ``history´´ of several major SOI materials and their field of application.
  • Keywords
    Annealing; Etching; Grain boundaries; History; Integrated circuit yield; Optical device fabrication; Optical materials; Semiconductor films; Silicon on insulator technology; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435410