A hybrid-method for modeling semiconductor power devices

Author

Goebel, H. ; Kraus, R. ; Mattausch, H.J.

Author_Institution

Univ. of Bundeswehr Munich, Germany

fYear

1993

fDate

20-24 Jun 1993

Firstpage

45

Lastpage

52

Abstract

Presented is a unified method for modeling power devices. The method is based on a hybrid algorithm that solves the equations describing the semiconductor partly numerically and partly analytically. A numerical algorithm solves the ambipolar diffusion equation that describes the static and dynamic charge carrier behavior in the lightly doped region of power devices. All other calculations are carried out by using analytical equations. The method has been applied to the power diode, the power bipolar transistor, and the IGBT. The simulation results are compared with measurements

Keywords

diffusion; insulated gate bipolar transistors; minority carriers; power bipolar transistors; power semiconductor diodes; semiconductor device models; IGBT; ambipolar diffusion equation; dynamic charge carrier behavior; hybrid-method; lightly doped region; modeling; numerical algorithm; power bipolar transistor; power diode; semiconductor power devices; simulation results; Bipolar transistors; Boundary conditions; Charge carriers; Circuits; Difference equations; Finite difference methods; Insulated gate bipolar transistors; Semiconductor diodes; Space charge; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1993. PESC '93 Record., 24th Annual IEEE

Conference_Location

Seattle, WA

Print_ISBN

0-7803-1243-0

Type

conf

DOI

10.1109/PESC.1993.471934

Filename

471934