Title :
Temperature-stable (wavelength ~ 1 μm) InAs/GaAs quantum dot light-emitting diode
Author :
Tang, Shiang-Feng ; Lin, Shih-Yen ; Lee, Si-Chen ; Tsai, Chi-Chou
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The InAs/GaAs quantum dot (QD) edge light emitting diode (LED) emitting at a wavelength of 1 μm has been fabricated which exhibits very small wavelength shift of 0.22 nm/K and the full width at half maximum (FWHM) broadening shift of 0.04 nm/K. Detailed temperature characteristics over a range from 20 to 300 K are presented
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; semiconductor quantum dots; 1 micron; 20 to 300 K; FWHM broadening shift; InAs-GaAs; InAs/GaAs quantum dot edge light emitting diode; temperature stability; wavelength shift; Erbium-doped fiber lasers; Gallium arsenide; Gold; Indium gallium arsenide; Infrared detectors; Light emitting diodes; Optical fiber communication; Quantum dots; Temperature distribution; US Department of Transportation;
Conference_Titel :
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-7215-8
DOI :
10.1109/NANO.2001.966459
