Characteristics of heterojunction consisting of polythiophene and n-type silicon

Summary form only given. A p-type semiconducting organic thin film was prepared by plasma polymerization of thiophene. The heterojunction device was newley fabricated by the direct plasma polymerization coating of this polymer layer over the n-Si substrate. The juction showed good rectifying and photoconducting characteristics at room temperature. The ideality factor was slightly above 7. Additionally, the complex impedence and photovoltaic measurement was also performed to characterize the photoresponse of this heterojunction device.