SOI Material Properties Determined by Electrical Characterization

It is shown that bonded SOI structures can be qualified for device fabrication through a series of eletrical measurements without fabrication of special test strucutres. The electrical methods include MOSCV, MOSIV, point contact MOS transistor (PCMOST) measurements, and spreading resistance profiling. It was found that buried oxide charge, contamination, and dopant segregation significantly impact the spreading resistance and MOSCV carrier density profiles in the SOI structures. The quality of the buried oxide was determined via MOSCV, MOSIV and a point contact MOS transistor by measuring the oxide charge density and oxide trap distribution. Field-to-breakdown, charge-to-breakdown, and Si-SiO2 barrier height associated with the buried oxide are discussed in the presentation.