Title :
A versatile electrical model for IGBT including thermal effects
Author :
Fatemizadeh, B. ; Silber, D.
Author_Institution :
Inst. fur Mikroelektronik und Bauelemente der Elektrotechnik, Bremen Univ., Germany
Abstract :
Based on general semiconductor device equations and results of two-dimensional modeling (PISCES), an analytical insulated gate bipolar transistor (IGBT) model has been developed. Temperature effects in the range 250-450 K are considered. The electrical-thermal model has been simplified to a level which enables implementation in general purpose circuit analysis computer programs, such as PSPICE and SABER, for use in the analysis and design of switching circuits
Keywords :
circuit analysis computing; insulated gate bipolar transistors; semiconductor device models; switching circuits; 250 to 450 K; IGBT; PISCES; PSPICE; SABER; circuit analysis computer programs; electrical model; electrical-thermal model; insulated gate bipolar transistor; semiconductor device equations; switching circuits; thermal effects; two-dimensional modeling; Analytical models; Bipolar transistors; Circuit analysis computing; Circuit simulation; Computational modeling; Conductivity; Equations; Insulated gate bipolar transistors; Radiative recombination; SPICE;
Conference_Titel :
Power Electronics Specialists Conference, 1993. PESC '93 Record., 24th Annual IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-1243-0
DOI :
10.1109/PESC.1993.471939
