Title :
Modelling and simulations of nanostructures for Shipley SPR505A resist using PRIME process
Author :
Arshak, K.I. ; Mihov, M. ; Arshak, A. ; McDonagh, D. ; Pomeroy, M.
Author_Institution :
Dept. of Electron. & Comput. Eng., Limerick Univ., Ireland
Abstract :
The Positive Resist Image by dry Etching (PRIME) process is a high resolution lithography system incorporating electron beam exposure, silylation and dry development. The process steps in PRIME with Shipley SPR505A resist have been modeled and simulations of nanostructures (50nm lines/spaces, 30nm single line) has been presented. The silylation process step in PRIME with SPR505A resist has been experimentally characterized using FT-IR spectroscopy
Keywords :
Fourier transform spectra; electron beam lithography; electron resists; etching; infrared spectra; nanotechnology; semiconductor process modelling; 30 nm; 50 nm; FT-IR spectra; PRIME process; Positive Resist Image by dry Etching process; Shipley SPR505A resist; electron beam exposure; high resolution lithography system; nanostructures modelling; nanostructures simulations; silylation; Dry etching; Electron beams; High-resolution imaging; Lithography; Materials science and technology; Nanostructures; Optical sensors; Optical surface waves; Resists; Surface topography;
Conference_Titel :
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-7215-8
DOI :
10.1109/NANO.2001.966463
