Temperature variation effects in MCTs, IGBTs, and BMFETs

Author

Godbold, C.V. ; Hudgins, J.L. ; Braun, C. ; Portnoy, W.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of South Carolina, Columbia, SC, USA

fYear

1993

fDate

20-24 Jun 1993

Firstpage

93

Lastpage

98

Abstract

The switching characteristics of the non-complementary MOS-controlled thyristor (MCT) (i.e., an MCT that is gated with respect to the cathode as opposed to the anode) are examined over a temperature range of -180 to 195°C. The forward conduction drop and dynamic performance of these MCTs are discussed and compared to the behavior of similar complementary MCTs, IGBTs (insulated gate bipolar transistors), and normally-off bipolar mode FETs (BMFETs) over the same temperature range

Keywords

MIS devices; MOS-controlled thyristors; field effect transistors; insulated gate bipolar transistors; thermal analysis; thyristors; -180 to 195 degC; BMFET; MCT; bipolar mode FET; cathode; dynamic performance; forward conduction drop; insulated gate bipolar transistors; non-complementary MOS-controlled thyristor; switching characteristics; temperature variation effects; Anodes; Cathodes; Conductivity; FETs; Insulated gate bipolar transistors; MOSFETs; Temperature distribution; Testing; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1993. PESC '93 Record., 24th Annual IEEE

Conference_Location

Seattle, WA

Print_ISBN

0-7803-1243-0

Type

conf

DOI

10.1109/PESC.1993.471940

Filename

471940