Title :
Temperature variation effects in MCTs, IGBTs, and BMFETs
Author :
Godbold, C.V. ; Hudgins, J.L. ; Braun, C. ; Portnoy, W.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
The switching characteristics of the non-complementary MOS-controlled thyristor (MCT) (i.e., an MCT that is gated with respect to the cathode as opposed to the anode) are examined over a temperature range of -180 to 195°C. The forward conduction drop and dynamic performance of these MCTs are discussed and compared to the behavior of similar complementary MCTs, IGBTs (insulated gate bipolar transistors), and normally-off bipolar mode FETs (BMFETs) over the same temperature range
Keywords :
MIS devices; MOS-controlled thyristors; field effect transistors; insulated gate bipolar transistors; thermal analysis; thyristors; -180 to 195 degC; BMFET; MCT; bipolar mode FET; cathode; dynamic performance; forward conduction drop; insulated gate bipolar transistors; non-complementary MOS-controlled thyristor; switching characteristics; temperature variation effects; Anodes; Cathodes; Conductivity; FETs; Insulated gate bipolar transistors; MOSFETs; Temperature distribution; Testing; Thyristors; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1993. PESC '93 Record., 24th Annual IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-1243-0
DOI :
10.1109/PESC.1993.471940
