DocumentCode :
1910923
Title :
Source/Drain Engineering with Ge Large Angle Tilt Implantation and Pre-Amorphization to Improve Currrent Drive and Alleviate Floating Body Effects of Thin Film SOI MOSFETs
Author :
Hsiao, Tommy C. ; Liu, Ping ; Lynch, William T. ; Woo, Jason C S
Author_Institution :
dvancedMicro Devices Inc., USA
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
516
Lastpage :
519
Keywords :
Etching; Length measurement; MOSFETs; Semiconductor thin films; Silicidation; Silicides; Silicon; Thin film devices; Transistors; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194479
Filename :
1503409
Link To Document :
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