DocumentCode
1910930
Title
Low temperature behaviour of submicron accumulation mode p-channel SOI MOSFETs
Author
Rotondaro, A.L.P. ; Magnusson, U. ; Simoen, E. ; Claeys, C. ; Colinge, J-P.
Author_Institution
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
857
Lastpage
860
Abstract
The conduction mechanisms of submicron accumulation mode SOI pMOSFETs are investigated for the device operation at T=77K and T=4.2K. A physical interpretation for the suppression of some current components is given. Finally, the room temperature analytical model is extended and experimentally validated for cryogenic operation analysis.
Keywords
Analytical models; Cryogenics; MOSFETs; Microelectronics; Nitrogen; Performance analysis; Semiconductor films; Substrates; Temperature dependence; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435422
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