Title :
Dynamic floating body effects in PD SOI MOSFETs biased in the kink region
Author :
Perron, L. ; Hamaguchi, C. ; Lacaita, A. ; Maegewa, M. ; Yamaguchi, Y.
Author_Institution :
Osaka University, Japan and Politecnico di Milano Italy
fDate :
22-24 September 1997
Keywords :
Impact ionization; Leakage current; MOSFET circuits; Semiconductor films; Silicon; Steady-state; Substrates; Switches; Switching frequency; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194481
