DocumentCode :
1911070
Title :
Low-Frequency Noise Characteristics of Advanced Si and SiGe Bipolar Transistors
Author :
Gabl, R. ; Aufinger, K. ; Beock, K. ; Meister, T.F.
Author_Institution :
Siemens AG, Austria
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
536
Lastpage :
539
Keywords :
Bipolar transistors; Cutoff frequency; Degradation; Germanium silicon alloys; Low-frequency noise; Noise generators; Noise measurement; Resistors; Silicon germanium; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194484
Filename :
1503414
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1911070
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