Title :
Inverse SiGe Heterojunction Bipolar Transistor
Author :
van den Oever, L.C.M. ; Nanver, L.K. ; Visser, C.C.G. ; Scholtes, T.L.M. ; Hueting, R.J.E. ; Slotboom, J.W.
Author_Institution :
Delft University of Technology, The Netherlands
fDate :
22-24 September 1997
Keywords :
Bipolar transistors; Boron; Doping profiles; Epitaxial growth; Etching; Germanium silicon alloys; Heterojunction bipolar transistors; Plasma applications; Plasma temperature; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194485
