• DocumentCode
    1911082
  • Title

    Inverse SiGe Heterojunction Bipolar Transistor

  • Author

    van den Oever, L.C.M. ; Nanver, L.K. ; Visser, C.C.G. ; Scholtes, T.L.M. ; Hueting, R.J.E. ; Slotboom, J.W.

  • Author_Institution
    Delft University of Technology, The Netherlands
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    540
  • Lastpage
    543
  • Keywords
    Bipolar transistors; Boron; Doping profiles; Epitaxial growth; Etching; Germanium silicon alloys; Heterojunction bipolar transistors; Plasma applications; Plasma temperature; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194485
  • Filename
    1503415
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1911082